參數(shù)資料
型號: QM80DY-3H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 2/5頁
文件大?。?/td> 90K
代理商: QM80DY-3H
Feb.1999
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
100
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
I
C
=1A, V
EB
=3V
V
EB
=3V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
1400
1400
1400
7
80
80
800
8
800
–40~+150
–40~+125
3000
1.47~1.96
15~20
1.96~2.94
20~30
470
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
N·m
kg·cm
g
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1400V, V
EB
=3V
V
CB
=1400V, Emitter open
V
EB
=7V
I
C
=80A, I
B
=1.6A
–I
C
=80A (diode forward voltage)
I
C
=80A, V
CE
=5V
V
CC
=800V, I
C
=80A, I
B1
=–I
B2
=1.6A
Transistor part (per 1/2 module)
Diode part (per 1/2 module)
Conductive grease applied (per 1/2 module)
Typ.
Max.
10
10
200
3.0
3.5
1.8
3.0
20
3.0
0.155
0.6
0.075
MITSUBISHI TRANSISTOR MODULES
QM80DY-3H
HIGH POWER SWITCHING USE
INSULATED TYPE
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