參數(shù)資料
型號(hào): QM75TF-HB
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開(kāi)關(guān)使用絕緣型
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 87K
代理商: QM75TF-HB
Feb.1999
0
10
1
10
0
10
–3
10
–2
10
–1
10
7
0
10
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
1
10
2
10
3
10
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=150mA
I
C
=75A
t
f
t
s
160
40
00
100
800
120
80
300 400 500
140
100
60
20
T
j
=125°C
I
B2
=–3.5A
I
B2
=–2.0A
200
600 700
100
90
60
50
40
20
00
160
20
40
60
80 100 120 140
80
10
70
30
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25°C
NON–REPETITIVE
100μs
t
w
=50μs
1ms
DC
10m
500μs
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
7
5
3
2
5
3
2
7
5
3
2
0.5
0.4
0.3
0.1
0
4
4
4
2 3 45 7
0.2
3
2
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM75TF-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關(guān)PDF資料
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