參數(shù)資料
型號: QM50HA-HB
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE INSULATED TYPE
中文描述: 中功率開關使用絕緣型
文件頁數(shù): 4/5頁
文件大小: 77K
代理商: QM50HA-HB
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
1
10
10
0.5
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM50HA-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
0
10
–1
10
–3
10
–2
10
2
10
0
3
10
2
10
1
10
0
10
–1
10
0
7
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
10
–1
10
–1
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
160
00
200
400
600
800
100
300
500
700
140
120
100
80
60
40
20
T
j
=125°C
I
B2
=–1.5A
I
B2
=–3.5A
1
10
7
5
4
3
2
10
7
5
4
3
2
2 3 4 5 7
0
10
2 3 4 5 7
1
10
t
s
T
j
=25°C
T
j
=125°C
I
C
=50A
I
B1
=100mA
V
CC
=300V
t
f
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25°C
NON-REPETITIVE
DC
10ms
1ms
100μs
500μs
2
10
10
7
5
4
3
2
0.2
10
7
5
4
3
2
0.6
1.0
1.4
1.8
2.2
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0.2
0.3
0.4
0
7
5
3
2
7
5
3
2
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
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