參數(shù)資料
型號: QM50CY-H
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE INSULATED TYPE
中文描述: 中功率開關使用絕緣型
文件頁數(shù): 4/5頁
文件大?。?/td> 72K
代理商: QM50CY-H
Feb.1999
–1
10
–2
10
–3
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
10
0
3
10
2
10
1
10
–1
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
10
7
5
4
3
2
2 3 4 5 7
0
10
10
7
5
4
3
3
2
2
t
s
t
f
3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=1A
I
C
=50A
160
00
200
400
600
800
120
80
40
I
B2
=–1A
–3A
–5A
–10A
T
j
=125°C
140
100
60
20
7
5
3
2
7
5
3
2
7
5
3
2
0.5
0.4
0.3
0.2
0.1
0
7
5
3
2
10
10
10
4
4
4
4
5
3
2
4
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0.4
2.4
2.0
1.6
1.2
0.8
T
j
=25°C
T
j
=125°C
0
10
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25°C
NON–REPETITIVE
1m
DC
10ms
500μs
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM50CY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關PDF資料
PDF描述
QM50DY-24B MEDIUM POWER SWITCHING USE INSULATED TYPE
QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE
QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE
QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE
QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE
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