
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM200DY2HB | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200HA24 | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY-HB | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200HA-HK | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY-24 | HIGH POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM200DY-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
| QM200DY-2HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY-H | 制造商:n/a 功能描述:Darlington Module |
| QM200DY-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |