型號: | QM100DY2HK |
英文描述: | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 100A I(C) |
中文描述: | 晶體管|晶體管電源模塊|半橋|達林頓| 1KV交五(巴西)總裁| 100號A一(c) |
文件頁數(shù): | 1/2頁 |
文件大?。?/td> | 157K |
代理商: | QM100DY2HK |
相關PDF資料 |
PDF描述 |
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QM100DY-H1K | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |
QM150DY24K | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 150A I(C) |
QM150DY-H1K | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 150A I(C) |
KD221A10 | Fast Switching Dual Darlington Transistor Module |
KD221K75 | Dual Darlington Transistor Module (75 Amperes/1000 Volts) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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QM100DY-2HK | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
QM100DY-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
QM100DY-H1K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |
QM100DY-HBK | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
QM100DY-HK | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |