參數(shù)資料
型號: QM1000HA-24B
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 4/5頁
文件大?。?/td> 63K
代理商: QM1000HA-24B
Feb.1999
7
5
4
3
2
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
1
10
2
10
3
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
–1
10
7
5
3
2
7
5
3
2
7
5
3
2
0.020
0.016
0.012
0.008
0.004
0
10
2 3 5 7
0
10
1
10
–2
10
–3
0
10
2400
400
00
400
800
1200
200
600
1000
1200
1600
800
2000
T
j
=125°C
–I
B2
=20A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
1
T
C
=25°C
NON–REPETITIVE
2
10
3
10
1
10
0
10
4
10
3
10
10
10
1ms
DC
100μs
50μs
200μs
7
5
4
3
2
2 3
5 7
7
5
4
3
2
2 3
5 7
2
10
1
10
0
10
0
10
1
10
t
s
t
f
V
CC
=600V
I
C
=1000A
I
B1
=2A
T
j
=25°C
T
j
=125°C
4
4
4
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
Z
t
°
C
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
C
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
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