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參數(shù)資料
| 型號： | QEE123.E3R0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 紅外LED |
| 英文描述： | 1.65 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 366K |
| 代理商： | QEE123.E3R0 |
4/30/02
Page 3 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE122
QEE123
Fig.1 Normalized Radiant Intensity vs. Forward Current
LENS TIP SEPARATION (INCHES)
Fig.2 Coupling Characteristics of QEE123 And QSE113
01
2
3
4
5
6
I C
(ON)
-
NORMALIZED
COLLECT
OR
CURRENT
(mA)
0.0
0.2
0.4
0.6
0.8
1.0
IF = 20 mA
Fig.3 Forward Voltage vs. Ambient Temperature
Fig. 5 Radiation Diagram
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Fig. 4 Normalized Intensity vs. Wavelength
λ (nm)
IF = 100 mA
Normalized to:
d = 0
IF Pulsed
tpw = 100 s
Duty Cycle = 0.1 %
VCC = 5 V
RL = 100
TA = 25C
IF - FORWARD CURRENT (mA)
1
10
100
1000
I e
-
NORMALIZED
RADIANT
INTENSITY
0.001
0.01
0.1
1
10
Normalized to:
IF = 100 mA Pulsed
tpw = 100 s
Duty Cycle = 0.1 %
TA = 25C
V
F
-
FOR
W
ARD
V
O
LT
A
GE
(V)
TA - AMBIENT TEMPERATURE (C)
-40
-20
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
IF Pulsed
tpw = 100 s
Duty Cycle = 0.1 %
IF = 100 mA
IF = 10 mA
IF = 50 mA
IF = 20 mA
775
800
825
850
875
900
925
950
NORMALIZED
RADIANT
INTENSITY
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QEE123K | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| QEE123K.E3R0 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| QEE123K_E3R0 | 功能描述:光電晶體管 0.4mW 1.7V IR LED RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QEE213 | 功能描述:紅外發(fā)射源 GaaS Type a LED Sidelooker RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEE213_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Infrared Light Emitting Diode |
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