參數(shù)資料
型號: QEE113
廠商: QT OPTOELECTRONICS
元件分類: 紅外LED
英文描述: GAAS INFRARED EMITTING DIODE
中文描述: 1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
文件頁數(shù): 2/4頁
文件大?。?/td> 332K
代理商: QEE113
4/30/02
Page 2 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE113
NOTES:
1. Derate power dissipation linearly 1.33 mW/
°
C above 25
°
C.
2. RMA
fl
ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise speci
fi
ed)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
T
STG
-40 to +100
°
C
Storage Temperature
-40 to +100
°
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°
C
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
100
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Emission Wavelength
I
F
= 100 mA
λ
PE
940
nm
Emission Angle
I
F
= 100 mA
2
Θ
1/2
50
Deg.
Forward Voltage
I
F
= 100 mA, tp = 20 ms
V
F
1.5
V
Reverse Current
V
R
= 5 V
I
R
I
E
t
r
t
10
μA
Radiant Intensity
I
F
= 100 mA, tp = 20 ms
3
12
mW/sr
Rise Time
I
F
= 100 mA
1000
ns
Fall Time
f
1000
ns
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