參數(shù)資料
型號: QED522
廠商: QT OPTOELECTRONICS
元件分類: 紅外LED
英文描述: AIGAAS INFRARED EMITTING DIODE
中文描述: 4.67 mm, 1 ELEMENT, INFRARED LED, 880 nm
封裝: PLASTIC, TO-46, 2 PIN
文件頁數(shù): 3/4頁
文件大小: 383K
代理商: QED522
6/13/02
Page 3 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED522 QED523
Fig. 1 Normalized Radiant Intensity vs. Forward Current
I
F
- FORWARD CURRENT (mA)
1
10
100
1000
I
e
V
F
0.001
0.01
0.1
1
10
Normalized to:
I
F
= 100 mA Pulsed
t
= 100
μ
s
Duty Cycle = 0.1 %
T
A
= 25
°
C
Fig. 2 Forward Voltage vs. Ambient Temperature
Fig. 3 Normalized Radiant Intensity vs. Wavelength
T
A
- AMBIENT TEMPERATURE (
°
C)
λ
(nm)
-40
-20
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
Normalized to:
I
F
Pulsed
t
= 100
μ
s
Duty Cycle = 0.1 %
I
F
= 100 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 20 mA
775
800
825
850
875
900
925
950
N
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 4
Radiation Diagram
0.0
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
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