參數(shù)資料
型號： Q8008VH3
元件分類： 晶閘管
英文描述： 800 V, 8 A, ALTERNISTOR TRIAC, TO-251
封裝： VPAK-3
文件頁數(shù)： 8/9頁
文件大?。?/td> 110K
代理商： Q8008VH3
Alternistor Triacs
Data Sheets
http://www.teccor.com
E4 - 8
2004 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants
versus Case Temperature
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants
versus Case Temperature
Figure E4.9 Normalized DC Holding Current versus Case Temperature
Figure E4.10 Peak Surge Current versus Surge Current Duration
(6 A to 12 A)
Figure E4.11 Peak Surge Current versus Surge Current Duration
(16 A to 40 A)
Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)
0
.5
1.0
1.5
2.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
V
GT
(T
C
=
25
C)
Ratio
of
V
GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
I GT
(T
C
=
25
C)
Ratio
of
I GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
I H
(T
C
=
25
C)
Ratio
of
I H
INITIAL ON-STATE CURRENT
= 400 mA dc 16 A to 40 A Devices
= 100 mA dc 6 to 12A Devices
200
120
40
1
2
3 45 6
8 10
20
30 40
60 80 100
200
300
600
1000
80
60
50
100
8
6
5
10
30
20
4
1
3
2
Surge Current Duration – Full Cycles
Peak
Surge
(Non-Repetitive)
On-state
Current
(I
TSM
)–
Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
Notes:
1) Gate control may be lost during and
immediately following surge current
interval
2) Overload may not be repeated until
junction temperature has returned
to steady state rated value.
10 A to 12 A Devices
8 A TO-251
and TO-252
8 A Devices
6 A Devices
6 A TO-251
and TO-252
110
100
1000
10
20
30
40
50
60
80
100
250
300
400
1000
Surge Current Duration – Full Cycles
Peak
Surge
(Non-repetitive)
On-state
Current
(I
TSM
)–
Amps
200
Notes:
1) Gate control may be lost during and
immediately following surge current
interval.
2) Overload may not be repeated until
junction temperature has returned to
steady-state rated value.
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
40 A Devices
35 A Devices
30 A Devices
25 A Devices
16 A Devices
0
100
200
300
400
500
0
2
4
6
8
10
DC Gate Trigger Current (IGT) – mA
IGT = 80 to 100 mA
T
y
pical
T
u
rn-on
Time
(t
gt
)–
s
IGT = 10 mA to 35 mA
IGT = 50 mA
相關PDF資料
PDF描述
Q8008VH4 800 V, 8 A, ALTERNISTOR TRIAC, TO-251
QK006DH3 1000 V, 6 A, ALTERNISTOR TRIAC, TO-252
QK006DH4 1000 V, 6 A, ALTERNISTOR TRIAC, TO-252
Q2006NH4 200 V, 6 A, ALTERNISTOR TRIAC, TO-263AB
Q2006DH3 200 V, 6 A, ALTERNISTOR TRIAC, TO-252
相關代理商/技術參數(shù)
參數(shù)描述
Q8008VH356 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:8 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Q8008VH4 功能描述:雙向可控硅 800V 8A RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
Q8008VH4TP 功能描述:雙向可控硅 Altnstr 800V 8A 35-35-35 mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
Q8010L4 功能描述:雙向可控硅 800V 10A 25-25-25mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
Q8010L5 功能描述:雙向可控硅 800V 10A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
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