參數(shù)資料
型號: Q67100-3036
廠商: SIEMENS AG
英文描述: 256K x 16-Bit EDO-Dynamic RAM
中文描述: 256K x 16位江戶動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 18/53頁
文件大?。?/td> 418K
代理商: Q67100-3036
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
18
12.99
Refresh Period
(4096 cycles)
t
REF
64
64
ms
Self Refresh Exit Time
t
SREX
1
1
CLK
6
Read Cycle
Data Out Hold Time
t
OH
t
LZ
t
HZ
t
DQZ
3
3
ns
2
Data Out to Low Impedance Time
1
0
ns
Data Out to High Impedance Time
3
7
3
8
ns
DQM Data Out Disable Latency
2
2
CLK
Write Cycle
Write Recovery Time
t
WR
t
DQW
2
2
CLK
DQM Write Mask Latency
0
0
CLK
AC Characteristics
(cont’d)
1, 2
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symb.
Limit Values
Unit
Note
-7.5
-8
min.
max.
min.
max.
相關(guān)PDF資料
PDF描述
Q67100-3039 256K x 16-Bit EDO-Dynamic RAM
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