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參數(shù)資料
| 型號： | Q67060-S6703-A4 |
| 廠商： | SIEMENS AG |
| 英文描述： | Smart Lowside Power Switch |
| 中文描述： | 智能Lowside電源開關 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 193K |
| 代理商： | Q67060-S6703-A4 |
14.07.1998
Semiconductor Group
Page 3
BTS 949
Electrical Characteristics
Parameter
at T
j
=25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150°C, I
D
= 10 mA
Off state drain current
V
DS
= 32 V, T
j
= -40...+150 °C, V
IN
= 0 V
Input threshold voltage
I
D
= 3,9 mA
Input current - normal operation, I
D
<
I
D(lim)
:
V
IN
= 10 V
Input current - current limitation mode, I
D
=I
D(lim)
:
V
IN
= 10 V
Input current - after thermal shutdown, I
D
=0 A:
V
IN
= 10 V
Input holding current after thermal shutdown
T
j
= 25 °C
T
j
= 150 °C
On-state resistance
I
D
= 19 A, V
IN
= 5 V, T
j
= 25 °C
I
D
= 19 A, V
IN
= 5 V, T
j
= 150 °C
On-state resistance
I
D
= 19 A, V
IN
= 10 V, T
j
= 25 °C
I
D
= 19 A, V
IN
= 10 V, T
j
= 150 °C
Nominal load current (ISO 10483)
V
IN
= 10 V, V
DS
= 0.5 V, T
C
= 85 °C
Symbol
Unit
Values
typ.
max.
min.
-
73
V
V
DS(AZ)
60
-
I
DSS
-
25
μA
1.7
2.2
V
IN(th)
1.3
V
-
100
μA
I
IN(1)
-
400
1000
I
IN(2)
-
3000
I
IN(3)
1500
6000
-
-
-
-
I
IN(H)
500
300
18
30
22
44
m
R
DS(on)
-
-
14
25
18
36
R
DS(on)
-
-
-
I
D(ISO)
19
-
A
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| Q67060-S7003-A2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SMD PROFET LESITUNGS MOSFET |
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