- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361230 > Q67060-S6128 (INFINEON TECHNOLOGIES AG) High Speed CMOS Logic Dual 4-Input NOR Gates 14-TSSOP -55 to 125 PDF資料下載
參數(shù)資料
| 型號(hào)： | Q67060-S6128 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed CMOS Logic Dual 4-Input NOR Gates 14-TSSOP -55 to 125 |
| 中文描述： | 智能高側(cè)電源開(kāi)關(guān)1頻道：1 ×200mз |
| 文件頁(yè)數(shù)： | 7/19頁(yè) |
| 文件大小： | 461K |
| 代理商： | Q67060-S6128 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
2004-01-27
Page 7
BTS 4141D
EMC-Characteristics
All EMC-Characteristics are based on limited number of sampels and no part of production test.
Test Conditions:
If not other specified the test circuitry is the minimal functional configuration without any external
components for protection or filtering.
Supply voltage:
V
bb = 13.5V Temperature:
T
a = 23
±
5°C ;
Load:
R
L = 220
Operation mode: PWM Frequency: 100Hz / Duty Cycle: 50%
DC On/Off
DUT-Specific.:
R
GND
Fast electrical transients
Acc. ISO 7637
Test Pulse
Test Level
Test Results
On
C
C
C
C
C
E (70V)
Pulse Cycle Time and
Generator Impedance
500ms ; 10
500ms ; 10
100ms ; 50
100ms ; 50
0,01
400ms ; 2
Off
C
C
C
C
C
1
2
-200 V
+200 V
-200 V
+ 200 V
-7 V
175 V
3a
3b
4
1)
5
E (70V)
The test pulses are applied at
V
bb
Definition of functional status
Class
C
E
Content
All functions of the device are performed as designed after exposure to disturbance.
One or more function of a device does not perform as designed after exposure
and can not be returned to proper operation without repairing or replacing the
device. The value after the character shows the limit.
Test circuit:
PROFET
V
OUT
IN
bb
R
L
Pulse
Bat.
R
GND
GND
1Supply voltage
V
bb = 12 V instead of 13,5 V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q67060-S6309 | Smart Highside High Current Power Switch |
| Q67060-S6310 | Smart Highside High Current Power Switch |
| Q67060-S6101-A2 | Smart Highside Power Switch |
| Q67060-S6101-A3 | Smart Highside Power Switch |
| Q67060-S6101-A4 | Smart Highside Power Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67060-S6136 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Addendum for PCN-Datasheet 2004-018-A |
| Q67060-S6160 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:High Current PN Half Bridge NovalithIC 43 A, 7 mз + 9 mз |
| Q67060-S6185 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:SIPMOS㈢ Power-Transistor |
| Q67060-S6186 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:SIPMOS㈢ Power-Transistor |
| Q67060-S6187 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:SIPMOS㈢ Power-Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。