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參數(shù)資料
| 型號(hào)： | Q67040S4186 |
| 英文描述： | TRANSISTOR MOSFET TO-252 |
| 中文描述： | 晶體管場(chǎng)效應(yīng)管- 252 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 131K |
| 代理商： | Q67040S4186 |
SPD 28N05L
Data Sheet
1
06.99
SIPMOS
PowerTransistor
Product Summary
Drain source voltage
55
VDS
V
Drain-Source on-state resistance
0.026
RDS(on)
ID
Continuous drain current
28
A
Features
N channel
Enhancement mode
Avalanche rated
Logic Level
dv/dt rated
175C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
SPD28N05L
Tape and Reel
P-TO252
Q67040-S4122
SPU28N05L
Tube
Q67040-S4114-A2
P-TO251
Maximum Ratings,at
Tj = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
TC =25C
TC = 100 C
28
20
ID
A
Pulsed drain current
TC =25C
IDpulse
112
Avalanche energy, single pulse
ID =28 A, VDD =25V, RGS =25
mJ
EAS
140
Avalanche energy, periodic limited by
Tjmax
7.5
EAR
Reverse diode d
v/dt
IS =28 A, VDS =40V, di/dt = 200 A/s,
Tjmax = 175 C
d
v/dt
6
kV/s
Gate source voltage
VGS
–20
V
Power dissipation
TC =25C
Ptot
75
W
Operating and storage temperature
Tj , Tstg
C
-55... +175
55/175/56
IEC climatic category; DIN IEC 68-1
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