- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361228 > Q67040-S4369 (INFINEON TECHNOLOGIES AG) Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Length:18.03mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | Q67040-S4369 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 散熱片 |
| 英文描述： | Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Length:18.03mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 碳化硅肖特基二極管 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 402K |
| 代理商： | Q67040-S4369 |
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
7
Rev. 2.2 Dec-04
E
,
S
0A
20A
40A
60A
80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
10
20
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 50A,
R
G
= 7
,
Dynamic test circuit in Figure E)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q67040-S4445 | Silicon Carbide Schottky Diode |
| Q67040-S4448 | Fast IGBT in NPT-technology |
| Q67040-S4449 | HEATSINK TO-220 W/PINS 1 TALL |
| Q67040-S4450 | Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| Q67040-S4490 | Off-Line SMPS Current Mode Controller with integrated 650V/ 800V CoolMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67040-S4372 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| Q67040-S4373 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| Q67040-S4374 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Carbide Schottky Diode |
| Q67040-S4375 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast Switching EmCon Diode |
| Q67040-S4376 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast Switching EmCon Diode |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。