參數(shù)資料
型號: Q67040-S4368
廠商: INFINEON TECHNOLOGIES AG
元件分類: 散熱片
英文描述: Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Body Material:Plastic; Color:Black; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sink Material:Plastic RoHS Compliant: No
中文描述: 碳化硅肖特基二極管
文件頁數(shù): 6/13頁
文件大?。?/td> 402K
代理商: Q67040-S4368
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
6
Rev. 2.2 Dec-04
t
S
0A
20A
40A
60A
80A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
S
0
5
10
15
20
25
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 7
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 50A,
Dynamic test circuit in Figure E)
t
S
25°C
50°C
75°C
100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 50A,
R
G
=7
,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.8mA)
相關(guān)PDF資料
PDF描述
Q67040-S4369 Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Length:18.03mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Q67040-S4445 Silicon Carbide Schottky Diode
Q67040-S4448 Fast IGBT in NPT-technology
Q67040-S4449 HEATSINK TO-220 W/PINS 1 TALL
Q67040-S4450 Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
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