參數資料
型號: Q65212-D2504
廠商: SIEMENS AG
英文描述: Differential Magnetoresistive Sensor
中文描述: 差分磁阻傳感器
文件頁數: 2/5頁
文件大?。?/td> 222K
代理商: Q65212-D2504
Semiconductor Group
2
FP 212 D 250-22
Maximum ratings
Characteristics (
T
A
= 25
°
C)
Measuring arrangements
By approaching a soft iron part close to the sensor a change in its resistance is obtained.
The potential divider circuit of the magneto resistor causes a reduction in the
temperature dependence of the output voltage
V
OUT
.
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
Insulation voltage between
terminals and magnet
Thermal conductivity
(when soldered)
Symbol
T
A
T
stg
P
tot
V
IN
V
I
Value
– 40/ + 140
– 40/ + 150
450
10
> 60
Unit
°
C
°
C
mW
V
V
G
thA
5
mW/K
Nominal supply voltage
Total resistance, (
δ
=
,
I
1 mA)
air gap (
δ
=
)
Center symmetry
3)
(
δ
=
)
Offset voltage
4)
(at
V
IN N
and
δ
=
)
Open circuit output voltage
5)
(at
V
IN N
and
δ
= 0.2 mm)
Cut-off frequency
V
IN N
R
1-3
5
1000
1600
V
M
V
0
10
130
%
mV
V
out pp
> 1100
mV
f
c
> 20
kHz
1) Corresponding to diagram
P
tot
=
f
(
T
A
)
2) Corresponding to diagram
V
IN
=
f(T
A
)
3)
M
----------------------------
=
R
1
4) Corresponding to measuring circuit in
Fig. 2
5) Corresponding to measuring circuit in
Fig. 2
and arrangement as shown in
Fig. 1
R
R
3
×
100% for
R
1-2
>
R
2-3
2
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