參數(shù)資料
型號(hào): Q65210-L101
廠商: SIEMENS AG
英文描述: Differential Magnetoresistive Sensor
中文描述: 差分磁阻傳感器
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 170K
代理商: Q65210-L101
Semiconductor Group
2
FP 201 L 100
Maximum ratings
Characteristics (
T
A
= 25
°
C)
This sensor is operated by a permanent magnet. Using the arrangement as shown in
Fig. 1
, the permanent magnet increases the internal biasing field through the righthand
side magneto resistor (connections 2-3), and reduces the field through the left side
magneto resistor (connections 1-2). As a result the resistance value of MR
2-3
increases
while that of MR
1-2
decreases. When the permanent magnet is moved from left to right
the above-mentioned process operates in reverse.
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
Insulation voltage between
terminals and casing
Thermal conductivity
Symbol
T
A
T
stg
P
tot
V
IN
V
I
Value
– 25 / + 100
– 25 / + 110
600
10
> 100
Unit
°
C
°
C
mW
V
V
G
thcase
G
thA
10
5
mW/K
mW/K
Nominal supply voltage
Total resistance, (
δ
=
,
I
1 mA)
Center symmetry
3)
(
δ
=
)
Offset voltage
4)
(at
V
IN N
and
δ
=
)
Open circuit output voltage
5)
(
V
IN N
and
δ
= 0.5 mm)
Cut-off frequency
V
IN N
R
1-3
M
V
0
5
700
1400
10
130
V
%
mV
V
out pp
> 2.2
V
f
c
> 7
kHz
1) Corresponding to diagram
P
tot
=
f
(
T
case
)
2) Corresponding to diagram
V
IN
=
f(T)
3)
M
---------------------------------
=
R
1
4)
Corresponding to measuring circuit in
Fig. 3
5) Corresponding to measuring circuit in
Fig. 3
and arrangement as shown in
Fig. 2
R
R
3
×
100% for
R
1-2
>
R
2-3
2
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