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參數(shù)資料
| 型號(hào)： | Q65110-L80F |
| 廠商： | SIEMENS AG |
| 英文描述： | Double Differential Magneto Resistor |
| 中文描述： | 雙差分磁電阻 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 201K |
| 代理商： | Q65110-L80F |
Semiconductor Group
2
FP 410 L (4
x
80) FM
The double differential magneto resistor assembly consists of two pairs of magneto
resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be
magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto
resistors is achieved using a copper/polyimide carrier film known as Micropack.
The basic resistance of each of the magnetic resistors is 80
. The two series coupled
pairs of magnetic resistors are actuated by an external magnetic field or can be biased
by a permanent magnet and actuated by a soft iron target.
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| Q65110A1458 | Vorlaufige Daten Preliminary Data |
| Q65110A1470 | Vorlaufige Daten Preliminary Data |
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