參數(shù)資料
型號: Q62703-Q1657
廠商: SIEMENS AG
英文描述: LIGHT EMITTING DIODES
中文描述: 發(fā)光二極管
文件頁數(shù): 6/8頁
文件大小: 552K
代理商: Q62703-Q1657
Semiconductor Group
6
LSG K370, LSP K370, LOP K370, LOG K370
Durchlastrom
I
F
=
f
(
V
F
)
Forward current
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LS, LO, LG
Relativer Lichtstrom
Φ
V
/
Φ
V(15 mA)
=
f
(
I
F
)
Relative luminous flux
T
A
= 25 C
Zulssige Impulsbelastbarkeit
I
F
=
f
(
t
p
)
Permissible pulse handling capability
Duty cycle D = parameter,
T
A
= 25 C
LP
相關PDF資料
PDF描述
Q62703-Q1662 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 75pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate
Q62703-Q1663 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
Q62703-Q1664 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
Q62703-Q1665 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
Q62703-Q1667 Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 75pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: S Failure Rate
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