
Semiconductor Group
1
Dec-12-1996
BFP 182W
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1mA to 20mA
fT = 8GHz
F = 1.2dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 182W
RGs
Q62702-F1502
1 = E
2 = C
3 = E
4 = B
SOT-343
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
35
mA
Base current
IB
4
Total power dissipation
TS ≤ 91 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 235
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.