- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361185 > Q62702-P5052 (SIEMENS AG) Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-P5052 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter |
| 中文描述： | Silizium針- Fotodiode麻省理工Tageslichtsperrfilter硅的PIN光電二極管與日光過(guò)濾器 |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-P5052 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-P5053 | GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm |
| Q62702-P5054 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| Q62702-P5059 | Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
| Q62702-P5060 | Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
| Q62702-P5098 | CHIPLED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702P5053 | 制造商:OSRAM 功能描述:LED IRLED 660NM 2PIN TO-18 - Bulk 制造商:OSRAM 功能描述:EMITTER GAALAS 660NM TO-18 |
| Q62702P5061 | 制造商:OSRAM 功能描述:EMITTER IR 950NM 5MM HI SPEED |
| Q62702P5062 | 制造商:OSRAM 功能描述:EMITTER IR 950NM 5MM HI SPEED |
| Q62702P5072 | 功能描述:紅外發(fā)射源 RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| Q62702P5073 | 制造商:OSRAM 功能描述:Phototransistor IR Chip Silicon 920nm 2-Pin 制造商:OSRAM 功能描述:PHOTOTRANSISTOR IR CHIP SILICON NPN TRANSISTOR 920NM 2PIN - Bulk 制造商:OSRAM 功能描述:PHOTOTRANS NPN 920NM SIDELOOKER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。