- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361203 > Q62702-G0116 (TriQuint Semiconductor,Inc.) Low-Noise, High-Linearity Packaged pHEMT FET PDF資料下載
參數(shù)資料
| 型號： | Q62702-G0116 |
| 廠商： | TriQuint Semiconductor,Inc. |
| 英文描述： | Low-Noise, High-Linearity Packaged pHEMT FET |
| 中文描述： | 低噪聲，高線性度包裝pHEMT制場效應(yīng)管 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-G0116 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-P17-S1 | Silizium-Differential-Fotodiode Silicon Differential Photodiode |
| Q62703-Q2670 | Multi ARGUS LED 3 mm T1 LED, Non Diffused |
| Q62703-Q3490 | Hyper 3 mm T1 LED, Non Diffused Hyper-Bright LED |
| Q62703-Q3870 | TRANS PREBIASED NPN 150MW SOT523 |
| Q62703-Q3910 | DIODE SWITCHING SINGLE 240V 225mA-Io 250mW 50ns-trr SOT-323 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q-62702-G66 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
| Q62702P 178 | 制造商:Osram 功能描述: |
| Q62702P0015 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18 |
| Q62702P0015S002 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk |
| Q62702P0015S003 | 制造商:OSRAM 功能描述:OSRBPX38-3 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。