參數(shù)資料
型號: Q62702-F776
廠商: SIEMENS AG
英文描述: NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
中文描述: NPN硅射頻晶體管(低失真寬帶放大器的集電極電流高達2 GHz的10毫安到30毫安。)
文件頁數(shù): 4/11頁
文件大?。?/td> 101K
代理商: Q62702-F776
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
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Q62702-F869 PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS)
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Q62702-F794 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors with High Reverse Voltage
Q62702-F803 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.)
Q62702-F804 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)