- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361183 > Q62702-F496 (SIEMENS AG) PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-F496 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
| 中文描述： | 進(jìn)步黨硅晶體管（高擊穿電壓低集電極發(fā)射極飽和電壓） |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-F496 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-F497 | NPN SILICON PLANAR TRANSISTORS |
| Q62702-F498 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-F500 | NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
| Q62702-F503 | PNP SILICON PLANAR TRANSISTOR |
| Q62702-F506 | PNP SILICON PLANAR TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F497 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON PLANAR TRANSISTORS |
| Q62702-F498 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
| Q62702-F500 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
| Q62702-F503 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR |
| Q62702-F506 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。