- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361195 > Q62702-F1776 (SIEMENS AG) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-F1776 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
| 中文描述： | 硅N溝道MOSFET四極管（低噪聲，高增益控制輸入級(jí)高達(dá)1GHz工作電壓5V） |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1776 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-F182 | N-Channel junction field-Effect Transistors |
| Q62702-F205 | N-Channel junction field-Effect Transistors |
| Q62702-F209 | N-Channel junction field-Effect Transistors |
| Q62702-F219 | N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| Q62702-F236 | N-Channel junction field-Effect Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1794 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
| Q62702-F182 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:N-Channel junction field-Effect Transistors |
| Q62702-F201 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transisrors |
| Q62702-F202 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transisrors |
| Q62702-F205 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:N-Channel junction field-Effect Transistors |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。