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參數(shù)資料
| 型號： | Q62702-F1189 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| 中文描述： | NPN硅射頻晶體管（對于低噪聲，高增益放大器，高達(dá)2 GHz。線性寬帶的集電極電流高達(dá)40 mA的應(yīng)用。） |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-F1189 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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| Q62702-F1218 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
| Q62702-F1219 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
| Q62702-F1219 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) |
| Q62702-F1222 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For application in TV-sat tuners) |
| Q62702-F1225 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
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