參數(shù)資料
型號(hào): Q62702-F1177
廠商: SIEMENS AG
英文描述: Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
中文描述: 硅N溝道MOSFET四極管(短通道高S晶體管/ ?品質(zhì)因數(shù))
文件頁數(shù): 3/11頁
文件大?。?/td> 101K
代理商: Q62702-F1177
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
S21
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
S21
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關(guān)PDF資料
PDF描述
Q62702-F1189 NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 GaAs FET (N-channel dual-gate GaAs MES FET)
Q62702-F1218 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1219 NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
Q62702-F1222 NPN Silicon RF Transistor (For application in TV-sat tuners)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F1189 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET)
Q62702-F1218 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1219 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
Q62702-F1222 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For application in TV-sat tuners)