參數(shù)資料
型號(hào)： Q62702-F1132
廠商： SIEMENS AG
英文描述： Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
中文描述： 硅N溝道MOSFET三極管（對(duì)于高頻階段高達(dá)300 MHz，最好是在FM應(yīng)用）
文件頁(yè)數(shù)： 6/11頁(yè)
文件大?。?/td> 101K
代理商： Q62702-F1132
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
￡
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
相關(guān)PDF資料
PDF描述
Q62702-F1144 NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
Q62702-F1177 Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
Q62702-F1189 NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 GaAs FET (N-channel dual-gate GaAs MES FET)
Q62702-F1218 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F1144 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
Q62702-F1177 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
Q62702-F1189 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET)
Q62702-F1218 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
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