參數(shù)資料
型號(hào)： Q62702-F1050
廠商： SIEMENS AG
英文描述： NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)
中文描述： NPN硅射頻晶體管（對(duì)于寬帶放大器高達(dá)2GHz和快速的非飽和由0.5毫安到20毫安的集電極電流開關(guān)）
文件頁數(shù)： 2/11頁
文件大?。?/td> 101K
代理商： Q62702-F1050
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料
PDF描述
Q62702-F1051 NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
Q62702-F1052 NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
Q62702-F1053 PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
Q62702-F1055 Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)
Q62702-F1056 NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F1051 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
Q62702-F1052 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
Q62702-F1053 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
Q62702-F1055 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)
Q62702-F1056 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
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