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參數(shù)資料
| 型號： | Q62702-F1042 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
| 中文描述： | NPN硅射頻晶體管（對于一般的小信號射頻應用在放大器，混頻器和振蕩器電路300兆赫） |
| 文件頁數(shù)： | 10/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-F1042 |
BGC420
High Frequency Products
10
Edition A13, 05/99
Table 1. Parasitic circuit elements for frequencies above 100MHz
X3
X4
R1
X2
R2
R3
R4
Q1
Vc
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
2
3
V
Lp1
Lp2
Cp1
Cp2
Lp5
Lp3
Lp4
Lp6
Cp3
Lp7
Figure 4. Parasitic circuit elements for frequencies above 100MHz
Element
Value
Lp1
Lp2
Lp3
Lp4
Lp5
Lp6
Lp7
Cp1
Cp2
Cp3
0.58nH
0.56nH
0.23nH
0.05nH
0.53nH
0.47nH
1nH
134fF
136fF
6.9fF
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1049 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
| Q62702-F1050 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
| Q62702-F1051 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
| Q62702-F1052 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
| Q62702-F1053 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
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