參數(shù)資料
      型號(hào): Q62702-B62
      廠商: SIEMENS AG
      英文描述: NPN SILICON EPIBASE TRANSISTORS
      中文描述: NPN硅EPIBASE三極管
      文件頁(yè)數(shù): 2/11頁(yè)
      文件大?。?/td> 101K
      代理商: Q62702-B62
      BGC420
      High Frequency Products
      2
      Edition A13, 05/99
      Maximum Ratings
      Parameter
      Device current
      Device voltage
      Total power dissipation, T
      s
      110°C
      1)
      Control voltage
      Input Current for pin 1
      Symbol
      I
      CC
      Vcc
      P
      tot
      Vc
      Ir
      Unit
      mA
      V
      mW
      V
      μ
      A
      15
      4.5
      68
      Vcc+0.5
      380
      Junction temperature
      Ambient temperature range
      Storage temperature range
      T
      j
      T
      A
      T
      stg
      150
      °
      C
      °
      C
      °
      C
      -65...+150
      -65...+150
      Thermal Resistance
      Junction-soldering point
      1)
      1)TS is measured on the Ground lead at the soldering point to the pcb
      .
      R
      th JS
      270
      K/W
      Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
      with Rx=82
      W
      ),
      Tc=25°C, Vcc=3V, I
      CC
      7mA unless noted
      Symbol
      Gp
      Parameter
      Power Gain (
      S
      21
      2
      )
      Unit
      dB
      Min
      17.5
      14.5
      Typ
      19
      16
      1.3
      1.5
      1
      1
      15
      15
      7
      9
      4
      7
      3.7
      2.5
      <10
      35
      -60
      Max
      f=900MHz
      f=1.8GHz
      f=900MHz
      f=1.8GHz
      NF
      Noise Figure (in 50
      W
      System)
      dB
      1.5
      1.7
      P
      -1dB
      Output Power at 1dB Gain Compression f=900MHz
      (in 50
      W
      System)
      Third Order Intercept Point
      (Output,
      G
      Opt
      )
      Input Return Loss
      f=1.8GHz
      f=900MHz
      f=1.8GHz
      f=900MHz
      f=1.8GHz
      f=900MHz
      f=1.8GHz
      dBm
      IP
      3
      dBm
      RL
      in
      dB
      RL
      out
      Output Return Loss
      dB
      t
      on
      t
      off
      I
      leak
      I
      VcOn
      I
      VcOff
      V
      cmin
      V
      cmax
      2)
      A positive sign denotes a current flowing form the Pin into the external circuit.
      On Switching Time
      3)
      Off Switching Time
      3)
      Leakage Current In Sleep Mode
      Controll Pin (Vc) Current in Active Mode
      2)
      Controll Pin (Vc) Current in Sleep Mode
      2)
      Minimum Voltage at Vc for Sleep Mode
      Maximum Voltage at Vc for Active Mode
      μs
      μs
      μA
      μA
      nA
      V
      V
      V
      cc
      - 0.3V
      0V+0.3V
      3)
      This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
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      相關(guān)代理商/技術(shù)參數(shù)
      參數(shù)描述
      Q62702-B628 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units)
      Q62702-B63 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON EPIBASE TRANSISTORS
      Q62702-B631 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
      Q62702B634 制造商:INFINEON 功能描述:DIODE
      Q62702B-634 制造商:INFINEON 功能描述:DIODE