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參數資料
| 型號： | Q62702-A1006 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
| 中文描述： | 交叉環(huán)四硅肖特基二極管（高級雙平衡混頻器，探測器和調制器相壘二極管） |
| 文件頁數： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-A1006 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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| Q62702-A1010 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
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