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參數(shù)資料
| 型號： | Q60215-Y62 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| 中文描述： | 叩- Silizium - Fototransistor硅npn型光電晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 333K |
| 代理商： | Q60215-Y62 |
Semiconductor Group
239
BPY 62
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
T
op
;
T
stg
Wert
Value
Einheit
Unit
°
C
Betriebs- und Lagertemperatur
Operating and storage temperature range
– 55 ... + 125
Lttemperatur bei Tauchltung
Ltstelle
≥
2 mm vom Gehuse,
Ltzeit
t
≤
5 s
Dip soldering temperature
≥
2 mm distance
from case bottom, soldering time
t
≤
5 s
Lttemperatur bei Kolbenltung
Ltstelle
≥
2 mm vom Gehuse,
Ltzeit
t
≤
3 s
Iron soldering temperature
≥
2 mm distance
from case bottom, soldering time
t
≤
3 s
Kollektor-Emitterspannung
Collector-emitter voltage
T
S
260
°
C
T
S
300
°
C
V
CE
50
V
Kollektorstrom
Collector current
Kollektorspitzenstrom,
τ <
10
μ
s
Collector surge current
I
C
100
mA
I
CS
200
mA
Emitter-Basisspannung
Emitter-base voltage
Verlustleistung,
T
A
= 25
°
C
Total power dissipation
V
EB
7
V
P
tot
200
mW
Wrmewiderstand
Thermal resistance
R
thJA
500
K/W
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|---|---|
| Q60215-Y65 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y66 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y67 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y63-S1 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60217-Y20 | PNP THYRISTOR TETRODE |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q60215-Y63-S1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y65 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y66 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y67 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60217-Y20 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP THYRISTOR TETRODE |
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