- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361174 > Q60215-Y1111 (SIEMENS AG) NPN-Silizium-Fototransistor Silicon NPN Phototransistor PDF資料下載
參數(shù)資料
| 型號(hào)： | Q60215-Y1111 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| 中文描述： | 叩- Silizium - Fototransistor硅npn型光電晶體管 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 333K |
| 代理商： | Q60215-Y1111 |
BPY 62
Semiconductor Group
240
Kennwerte
(
T
A
= 25
°
C,
λ
= 950 nm)
Characteristics
Bezeichnung
Description
Symbol
Symbol
λ
S max
Wert
Value
Einheit
Unit
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
850
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10 % von
S
max
Spectral range of sensitivity
S
= 10 % of
S
max
Bestrahlungsempfindliche Flche
Radiant sensitive area
λ
420 ... 1130
nm
A
0.12
mm
2
Abmessung der Chipflche
Dimensions of chip area
L
×
B
L
×
W
H
0.5
×
0.5
mm
×
mm
Abstand Chipoberflche zu Gehuseober-
flche
Distance chip front to case surface
2.4 ... 3.0
mm
Halbwinkel
Half angle
±
8
Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
E
e
= 0.5 mW/cm
2
,
V
CB
= 5 V
E
v
= 1000 Ix, Normlicht/standard light A,
V
CB
= 5 V
Kapazitt
Capacitance
V
CE
= 0 V,
f
= 1 MHz,
E
= 0
V
CB
= 0 V,
f
= 1 MHz,
E
= 0
V
EB
= 0 V,
f
= 1 MHz,
E
= 0
Dunkelstrom
Dark current
V
CE
= 35 V,
E
= 0
I
PCB
I
PCB
4.5
17
μ
A
μ
A
C
CE
C
CB
C
EB
I
CEO
8
11
19
5 (
≤
100)
pF
pF
pF
nA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q60215-Y1112 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y1113 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y62 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y65 | Silizium-Fotoelement Silicon Photovoltaic Cell |
| Q60215-Y66 | Silizium-Fotoelement Silicon Photovoltaic Cell |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q60215Y1112 | 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 830NM 3PIN TO-18 - Bulk |
| Q60215-Y1112 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215Y1113 | 功能描述:光電晶體管 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| Q60215-Y1113 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q60215-Y111-S4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silizium-Fotoelement Silicon Photovoltaic Cell |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。