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參數(shù)資料
| 型號： | Q6015LTH56 |
| 元件分類： | 晶閘管 |
| 英文描述： | TRIAC WITH INT TRIGGER, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, ISOLATED TO-220AB, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 731K |
| 代理商： | Q6015LTH56 |
160
Revised: November 1, 2010 05:04 PM
2010 Littelfuse, Inc
Teccor brand Thyristors
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
4 / 6 / 8 / 10 / 15 Amp Quadracs
QxxxxLTx Series
Soldering Parameters
Reflow Condition
Pb – Free assembly
Pre Heat
-Temperature Min (T
s(min))
150°C
-Temperature Max (T
s(max))
200°C
-Time (min to max) (t
s)
60 – 180 secs
Average ramp up rate (LiquidusTemp)
(T
L) to peak
5°C/second max
T
S(max) to TL - Ramp-up Rate
5°C/second max
Reflow
-Temperature (T
L) (Liquidus)
217°C
-Temperature (t
L)
60 – 150 seconds
PeakTemperature (T
P)
260°C +0/-5
Time within 5°C of actual peak
Temperature (t
p)
20 – 40 seconds
Ramp-down Rate
5°C/second max
Time 25°C to peakTemperature (T
P)
8 minutes Max.
Do not exceed
280°C
Environmental Specifications
Test
Specifications and Conditions
High Temperature
Voltage Blocking
MIL-STD-750: Method 1040, Condition A
Rated V
DRM (VAC-peak), 125°C, 1008
hours
Temperature Cycling
MIL-STD-750: Method 1051
-40°C to 150°C, 15-minute dwell,
100 cycles
Biased Temperature &
Humidity
EIA/JEDEC: JESD22-A101
320VDC, 85°C, 85%RH, 1008 hours
High Temp Storage
MIL-STD-750: Method 1031
150°C, 1008 hours
Low-Temp Storage
-40°C, 1008 hours
Thermal Shock
MIL-STD-750: Method 1056
0°C to 100°C, 5-minute dwell,
10-second transfer, 10 cycles
Autoclave
(Pressure Cooker Test)
EIA/JEDEC: JESD22-A102
121°C, 100%RH, 2atm, 168 hours
Resistance to
Solder Heat
MIL-STD-750: Method 2031
260°C, 10 seconds
Solderability
ANSI/J-STD-002, Category 3, Test A
Lead Bend
MIL-STD-750: Method 2036, Condition E
Physical Specifications
Terminal Finish
1005 Matte Tin-plated
Body Material
UL Recognized epoxy meeting
flammability classification 94v-0
Lead Material
Copper Alloy
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Time
Te
mperatur
e
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
Ramp-up
Ramp-down
Ramp-do
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| Q6015N5RP | 功能描述:雙向可控硅 600V 15A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| Q6015N5TP | 功能描述:雙向可控硅 600V 15A 50-50-50mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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