參數(shù)資料
型號(hào)： Q2006DH4
元件分類： 晶閘管
英文描述： 200 V, 6 A, ALTERNISTOR TRIAC, TO-252
封裝： DPAK-3
文件頁(yè)數(shù)： 8/9頁(yè)
文件大?。?/td> 110K
代理商： Q2006DH4
Alternistor Triacs
Data Sheets
http://www.teccor.com
E4 - 8
2004 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants
versus Case Temperature
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants
versus Case Temperature
Figure E4.9 Normalized DC Holding Current versus Case Temperature
Figure E4.10 Peak Surge Current versus Surge Current Duration
(6 A to 12 A)
Figure E4.11 Peak Surge Current versus Surge Current Duration
(16 A to 40 A)
Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)
0
.5
1.0
1.5
2.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
V
GT
(T
C
=
25
C)
Ratio
of
V
GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
I GT
(T
C
=
25
C)
Ratio
of
I GT
0
1.0
2.0
3.0
4.0
-65
-15
+65
+25
+125
-40
Case Temperature (T
C) – C
I H
(T
C
=
25
C)
Ratio
of
I H
INITIAL ON-STATE CURRENT
= 400 mA dc 16 A to 40 A Devices
= 100 mA dc 6 to 12A Devices
200
120
40
1
2
3 45 6
8 10
20
30 40
60 80 100
200
300
600
1000
80
60
50
100
8
6
5
10
30
20
4
1
3
2
Surge Current Duration – Full Cycles
Peak
Surge
(Non-Repetitive)
On-state
Current
(I
TSM
)–
Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
Notes:
1) Gate control may be lost during and
immediately following surge current
interval
2) Overload may not be repeated until
junction temperature has returned
to steady state rated value.
10 A to 12 A Devices
8 A TO-251
and TO-252
8 A Devices
6 A Devices
6 A TO-251
and TO-252
110
100
1000
10
20
30
40
50
60
80
100
250
300
400
1000
Surge Current Duration – Full Cycles
Peak
Surge
(Non-repetitive)
On-state
Current
(I
TSM
)–
Amps
200
Notes:
1) Gate control may be lost during and
immediately following surge current
interval.
2) Overload may not be repeated until
junction temperature has returned to
steady-state rated value.
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
40 A Devices
35 A Devices
30 A Devices
25 A Devices
16 A Devices
0
100
200
300
400
500
0
2
4
6
8
10
DC Gate Trigger Current (IGT) – mA
IGT = 80 to 100 mA
T
y
pical
T
u
rn-on
Time
(t
gt
)–
s
IGT = 10 mA to 35 mA
IGT = 50 mA
相關(guān)PDF資料
PDF描述
Q2006VH3 200 V, 6 A, ALTERNISTOR TRIAC, TO-251
Q2006VH4 200 V, 6 A, ALTERNISTOR TRIAC, TO-251
Q2008DH3 200 V, 8 A, ALTERNISTOR TRIAC, TO-252
Q2008DH4 200 V, 8 A, ALTERNISTOR TRIAC, TO-252
Q2008VH3 200 V, 8 A, ALTERNISTOR TRIAC, TO-251
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q2006DH4RP 功能描述:雙向可控硅 200V 6A RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
Q2006DH4TP 功能描述:雙向可控硅 200V 6A RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
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Q2006F441 功能描述:雙向可控硅 200V 6A 25-25-25mA RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB
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