- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄365375 > PZTA92T1 (MOTOROLA INC) PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT PDF資料下載
參數(shù)資料
| 型號(hào)： | PZTA92T1 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 107K |
| 代理商： | PZTA92T1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
–300
Vdc
Collector–Base Voltage
–300
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current
Total Power Dissipation up to TA = 25
°
C(1)
Storage Temperature Range
–500
mAdc
1.5
Watts
–65 to +150
°
C
Junction Temperature
150
°
C
DEVICE MARKING
P2D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance from Junction to Ambient(1)
R
θ
JA
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –100
μ
Adc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –100
μ
Adc, IC = 0)
Collector–Base Cutoff Current (VCB = –200 Vdc, IE = 0)
Emitter–Base Cutoff Current (VBE = –3.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain(2)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
Saturation Voltages
(IC = –20 mAdc, IB = –2.0 mAdc)
(IC = –20 mAdc, IB = –2.0 mAdc)
DYNAMIC CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–300
—
Vdc
–300
—
Vdc
–5.0
—
Vdc
—
–0.25
μ
Adc
μ
Adc
—
–0.1
hFE
25
40
25
—
—
—
—
VCE(sat)
VBE(sat)
—
—
–0.5
–0.9
Vdc
Collector–Base Capacitance @ f = 1.0 MHz (VCB = –20 Vdc, IE = 0)
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
2. Pulse Test: Pulse Width
≤
300
μ
s; Duty Cycle = 2.0%.
Ccb
fT
—
6.0
pF
50
—
MHz
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by PZTA92T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 318E–04, STYLE 1
TO–261AA
1
2
3
4
SOT–223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZTA92 | PNP High Voltage Amplifier |
| PZTA96ST1 | High Voltage Transistor PNP Silicon(PNP型高壓晶體管) |
| S07J | HEX BUFFERS/DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS |
| S07J | Small Surface Mount Diodes |
| S07J | DIP Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZTA92T1/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:High Voltage Transistor PNP |
| PZTA92T1G | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTA92T1G | 制造商:ON Semiconductor 功能描述:Standard Recovery Rectifier |
| PZTA93 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon High-Voltage Transistors |
| PZTA93G-AA3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。