參數(shù)資料
型號: PZT3904
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN Switching Double Transistors
中文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SOT-223, 4 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 47K
代理商: PZT3904
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN switching transistor
PZT3904
FEATURES
Low current (max. 200 mA)
Low voltage (max. 40 V).
APPLICATIONS
High-speed saturated switching.
DESCRIPTION
NPN switching transistor in a SOT223 plastic package.
PNP complement: PZT3906.
PINNING
PIN
DESCRIPTION
1
base
collector
emitter
2, 4
3
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
60
40
6
200
300
100
1.05
+150
150
+150
V
V
V
mA
mA
mA
W
°
C
°
C
°
C
T
amb
25
°
C; note 1
相關PDF資料
PDF描述
PZT3906 PNP switching transistor
PZT751T3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-261AA
PZTA05 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | SOT-223
PZTA42 NPN High Voltage Amplifier(NPN高電壓放大器)
PZTA55 PNP General Purpose Amplifier
相關代理商/技術參數(shù)
參數(shù)描述
PZT3904,115 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PZT3904,135 功能描述:兩極晶體管 - BJT TRANS SW TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PZT3904 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 0.2A NPN SOT223 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, 0.2A, NPN, SOT223 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, 0.2A, NPN, SOT223; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:300; Operating Temperature Min:-55C; No. of Pins:4 ;RoHS Compliant: Yes
PZT3904_F081 功能描述:兩極晶體管 - BJT NPN 80V SINGLE BIPOLAR SOT223 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PZT3904_Q 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2