參數(shù)資料
型號: PY291A-50WC
廠商: PYRAMID SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 2K X 8 REPROGRAMMABLE PROM
中文描述: 2K X 8 UVPROM, 50 ns, CDIP24
封裝: 0.300 INCH, CERAMIC, DIP-24
文件頁數(shù): 4/9頁
文件大小: 111K
代理商: PY291A-50WC
PY291A
Page 4 of 9
Document #
EPROM101
REV OR
DEVICE ERASURE
If the device is subjected to wavelengths of light below
4000 Angstroms, device erasure will commence. It is
therefore recommended to use an opaque label over the
window in the event the device will be exposed to lighting
for a long time. The UV dose for erasure requires a
wavelength of 2,537 Angstroms for a minimum dose of
25 Wsec/cm
2
. If using a UV lamp of 12 mW/cm
2
, the
exposure time is estimated to be 35 minutes. Devices
should be positioned within 1 inch of the lamp during the
erasure process. Permanent damage can occur to the
devices if exposed to UV light for an extended period of
time.
Read or Output Disable
A
10
-A
0
CS
3
CS
2
CS
1
O
7
-O
0
Other
A
10
-A
0
PGM
VFY
V
PP
D
7
-D
0
A
10
-A
0
V
IH
V
IH
V
IL
O
7
-O
0
A
10
-A
0
X
X
V
IH
High Z
A
10
-A
0
X
V
IL
X
High Z
A
10
-A
0
V
IL
X
X
High Z
A
10
-A
0
V
ILP
V
IHP
V
PP
D
7
-D
0
A
10
-A
0
V
IHP
V
ILP
V
PP
O
7
-O
0
A
10
-A
0
V
IHP
V
IHP
V
PP
High Z
A
10
-A
0
V
ILP
V
IHP
V
PP
D
7
-D
0
A
10
-A
0
V
IHP
V
ILP
V
PP
Zeros
Pin Function
Mode
Blank Check Zeros
Output Disable
Output Disable
Program
Program Verify
Read
Output Disable
Program Inhibit
Intelligent Program
MODE SELECTION
PROGRAMMING PINOUTS
X = Don't Care
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