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參數(shù)資料
| 型號： | PY264-55WMB |
| 廠商： | PYRAMID SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 8K X 8 REPROGRAMMABLE PROM |
| 中文描述： | 8K X 8 UVPROM, 55 ns, CDIP24 |
| 封裝： | 0.600 INCH, WINDOWED, CERAMIC, DIP-24 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 146K |
| 代理商： | PY264-55WMB |
PY264
Page 3 of 8
Document #
EPROM102
REV OR
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
TIMING WAVEFORM OF READ CYCLE
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
and I
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Min
Max
Min
Max
Min
Max
t
AA
Address to Output Valid
35
45
55
ns
t
HZCS1
Chip Select Inactive to High Z
20
30
35
ns
t
ACS1
Chip Select Active to Output Valid
20
30
35
ns
t
HZCS2
Chip Select Inactive to High Z
35
45
55
ns
t
ACS2
Chip Select Active to Output Valid
35
45
55
ns
t
PU
Chip Select Active to Power-Up
0
0
0
ns
t
PD
Chip Slect Inactive to Power-Down
35
45
55
ns
Unit
Symbol
Parameter
-45
-35
-55
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