參數(shù)資料
型號(hào): PXB16050U
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-439A, 3 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 74K
代理商: PXB16050U
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PXB16050U
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC19a”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C measured in the common base test circuit as shown in Fig.4 and working in
CW class C mode.
Note
1.
Type PXB16050U may be used for narrowband or broadband amplifiers within the frequency range 1.5 to 1.8 GHz.
Operation below 1.5 GHz may damage the transistor due to resonance of the internal output prematching circuit.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 100
°
C
note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
1.5
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 40 V; I
E
= 0
V
CB
= 45 V; I
E
= 0
V
CE
= 30 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
3
15
3
300
mA
mA
mA
μ
A
I
CES
I
EBO
collector cut-off current
emitter cut-off current
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
po
(dB)
η
C
(%)
Z
i
/Z
L
(
)
Class C (CW);
see note 1
1.65
28
45; typ. 50
8.5; typ. 9.5
45; typ. 52
see Figs 6
and 7
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