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參數(shù)資料
| 型號(hào)： | PUB4753 |
| 英文描述： | Composite Device - Power Transistor Arrays |
| 中文描述： | 綜合裝置-電源晶體管陣列 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | PUB4753 |
225
Power Transistor Arrays (F-MOS FETs)
PUB4753
(PU7457)
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
unit: mm
I
Features
G
High avalanche energy capacity
G
High electrostatic breakdown voltage
G
No secondary breakdown
G
High breakdown voltage, large allowable power dissipation
G
Allowing Low-voltage drive
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
G: Gate
D: Drain
S: Source
SIP10-A1 Package
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
Conditions
V
DS
= 80V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
GS
= 4V, I
D
= 2A
V
DS
= 10V, I
D
= 2A
I
DR
= 3A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 2A
V
DD
= 50V, R
L
= 25
min
85
1
2.5
typ
300
400
4
130
160
25
0.2
0.3
1.5
max
10
±10
115
2.5
450
600
1.6
Unit
μ
A
μ
A
V
V
m
m
S
V
pF
pF
pF
μ
s
μ
s
μ
s
Internal Connection
25.3
±0.2
9
×
2.54 = 22.86
±0.25
0.5
±0.15
1.0
±0.25
C 1.5
±0.5
1 2 3 4 5 6 7 8 9 10
2.54
±0.2
9
±
1
±
8
±
4
±
S
5
±
4.0
±0.2
0.8
±0.25
0.5
±0.15
10
1
2
3
5
7
4
6
8
9
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
Non repetition
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
100 ± 15
±20
±3
±9
22.5
15
3.5
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 5mH, I
L
= 3A, 1 pulse
I
Electrical Characteristics
(T
C
= 25°C)
Note) The part number in the parenthesis shows conventional part number.
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