
Features
SBU_f.pub 4-page data sheet
3 dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Cost Effective Ceramic Microstrip Packages
Tape and Reel Packaging Available
Description
M/A-COM’s
MA4TD045
performance silicon bipolar MMICs housed in cost effective
ceramic
microstrip
packages.
MA4TD0436 are designed for use where a general purpose 50
gain block is desired. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications.
The MA4TD0435 and MA4TD0436 are fabricated using a 10
GHz fT silicon bipolar technology that features gold metalization
and IC passivation for increased performance and reliability.
and
MA4TD0436
are
high
The
MA4TD0435
and
Ceramic Microstrip Case Style Outlines
1, 2, 3
Available in short lead version as MA4TD0436.
Notes: (unless otherwise specified)
1. Dimensions are in/mm
2. Tolerance: in .xxx =
±
.0005; mm .xx = ±.13
3. See last page of data sheet for short lead Micro-X
Pin Number
1
2 & 4
3
Pin Package
RF Input
AC/DC Ground
RF Output and DC Bias
Pin Configuration
-9
-8.5
-8
-7.5
-7
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
RF FREQ (MHz)
C
Typical Power Gain vs. Frequency
Symbol
Gp
Gp
f
3dB
SWRin
SWRout
P
1dB
NF
IP
3
t
D
Vd
dV/dT
Parameters
Test Conditions
f = 0.1 GHz
dB
—
—
—
f = 0.1 GHz
dB
f = 0.1 GHz
ps
—
—
Units
dB
—
GHz
—
—
dBm
—
dBm
—
V
mV/°C
Min.
7.5
±
0.5
—
1.5
1.6
—
6.2
—
125
4.75
—
Typ.
9.0
±
1.0
3.0
—
—
12.5
—
25.5
—
5.25
-8.0
Max.
9.5
—
—
—
—
—
—
—
—
5.75
—
Power Gain ( IS
21
I
2
)
Gain Flatness = 0.1 to 2.0 GHz
3 dB Bandwidth
Input SWRf = 0.1 to 2.0GHz
Output SWRf = 0.1 to 2.0GHz
Output Power @ 1 dB Gain Compression
50
Noise Figuref = 1.0 GHz
Third Order Intercept Point
Group Delay f = 1.0 GHz
Device Voltage
Device Voltage Temperature Coefficient
Electrical Specifications @ T
A
= +25°C, I
d
= 50 mA, Z
0
= 50
=
Silicon Bipolar Cascadable Amplifiers (Headline)
978-442-4866 wingding / ariel