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參數(shù)資料
| 型號： | PU3121 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 35 V, 3 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | SIP-8 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 206K |
| 代理商： | PU3121 |
Power Transistor Arrays
1
Publication date: March 2004
SJK00011AED
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
±5V
Collector-emitter voltage (Base open)
VCEO
30
±5V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
2A
Peak collector current
ICP
4A
Collector power dissipation
PC
15
W
Ta = 25°C
2.4
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 5 mA, I
B
= 025
35
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 25 V, I
E
= 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 02
mA
Forward current transfer ratio
hFE1
VCE
= 4 V, I
C
= 1 A
1 000
hFE2 *
1
VCE
= 4 V, I
C
= 2 A
1 000
10 000
Collector-emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 8 mA
2.5
V
Base-emitter saturation voltage
VBE(sat)
IC
= 2 A, I
B
= 8 mA
2.5
V
Transition frequency
fT
VCE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 2 A
0.4
s
Storage time
tstg
IB1
= 8 mA, I
B2
= 8 mA
3.0
s
Fall time
tf
VCC
= 20 V
1.0
s
Energy handling capability *
2
Es/b
IC = 1.45 A, L = 100 mH, RBE = 100
100
mJ
■ Electrical Characteristics T
C = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: Es/b test circuit
Note) The part numbers in the parenthesis show conventional part number.
Rank
Free
P
Q
hFE
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
PUA3121 (PU3121)
Silicon NPN triple diffusion planar type darlington
For power amplification
■ Features
Built-in zener diode (30 V) between collector and base
Small variation in withstand pressure
Large energy handling capability
High-speed switching
NPN 3 elements
■ Absolute Maximum Ratings T
C = 25°C
Unit: mm
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
20.2±0.3
2.54±0.2
7
× 2.57 = 17.78±0.25
12345678
1.0±0.25
0.5±0.15
0.8±0.25
C 1.5±0.5
0.5±0.15
9.5
±
0.2
8.0
±
0.2
4.4
±
0.5
1.65
±
0.2
Solder
Dip
5.3
±
0.5
4.0±0.2
X
L
RBE
Mercury relay
Y
Z
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PU3121P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | DARLINGTON | 30V V(BR)CEO | 2A I(C) | SIP |
| PU3121Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | DARLINGTON | 30V V(BR)CEO | 2A I(C) | SIP |
| PU3122 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | DARLINGTON | 30V V(BR)CEO | 4A I(C) | SIP |
| PU3122P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | DARLINGTON | 30V V(BR)CEO | 4A I(C) | SIP |
| PU3122Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | ARRAY | DARLINGTON | 30V V(BR)CEO | 4A I(C) | SIP |
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