- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370026 > PTF10041 Verilog Control Libraries, and complete FOC algorithm, plus ServoDesigner Tool PDF資料下載
參數(shù)資料
| 型號： | PTF10041 |
| 英文描述： | Verilog Control Libraries, and complete FOC algorithm, plus ServoDesigner Tool |
| 中文描述： | 晶體管| MOSFET的| N溝道| 65V的五（巴西）決策支持系統(tǒng)|采用SOT - 391BVAR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 77K |
| 代理商： | PTF10041 |
1
RF Specifications
(Guaranteed)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 3 W, I
DQ
= 125 mA, f = 1930, 1990 MHz)
Output Power at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 125 mA, f = 1990 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 125 mA, f = 1990 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 125 mA, f = 1990 MHz
—all phase angles at frequency of test)
G
ps
10
—
—
dB
P-1dB
12
—
—
Watts
38
—
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10041
GOLDMOS
Field Effect Transistor
12 Watts, 1.99 GHz
PTF10041
Package 20249
0
2
4
6
8
10
12
14
16
0.0
0.5
1.0
1.5
2.0
2.5
Input Power (Watts)
O
V
DD
= 26 V
I
= 125 mA
f = 1990 MHz
Typical Output Power vs. Input Power
Description
The PTF 10041 is a 12–watt
GOLDMOS
FET intended for large
signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38%
efficiency with 10 dB minimum gain. Nitride surface passivation and
full gold metallization ensure excellent device lifetime and reliability.
Guaranteed Performance at 1.99 GHz, 26 V
DS
- Output Power = 12 Watts Min
- Power Gain = 10 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10147 | CFL Ballast for 26W/Spiral Lamp, 220VAC Input |
| PTF102003 | 30V N-Channel PowerTrench MOSFET |
| PTF102015 | Dimming lighting ballast, IR2159, European version, 230VAC line, 36W/T8 lamp |
| PTI3134-9L | Radar Pulsed Power Transistor, SW, 300ms Pulse, 10% Duty 3.1 - 3.4 GHz |
| PTK8607 | 8 Bit Micro-controller Data Sheet |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10043 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10045 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
| PTF10048 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
| PTF10052 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10053 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。