參數(shù)資料
型號(hào): PTF080601A
廠商: INFINEON TECHNOLOGIES AG
英文描述: LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
中文描述: LDMOS射頻功率場(chǎng)效應(yīng)晶體管60瓦,860-960兆赫
文件頁(yè)數(shù): 6/6頁(yè)
文件大小: 293K
代理商: PTF080601A
6
Edition 2003-12-05
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
www.infineon.com/rfpower
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
PTF080601
Revision History:
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2003-12-05
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相關(guān)PDF資料
PDF描述
PTF080601E LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
PTF080601F LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
PTF080901E LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
PTF080901F LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF080601E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
PTF080601EF-DS1 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
PTF080601F 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
PTF080901 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
PTF080901E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz