參數(shù)資料
型號: PT9702B
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 28K
代理商: PT9702B
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 20 mA
BV
CES
I
C
= 20 mA
BV
EBO
I
E
= 2.0 mA
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
UNITS
V
60
V
4.0
V
2.0
mA
10
150
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
24
pF
P
G
η
C
V
CE
= 28 V
P
out
= 20 W f = 400 MHz
7.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
PT9702B
DESCRIPTION:
The
ASI PT9702B
is a Common
Emitter Device Designed for Class AB
and C Amplifier Applications in the 220
- 400 MHz Military Communications
Band.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
High Gain
MAXIMUM RATINGS
I
C
2.0 A
V
CES
60 V
V
CEO
30 V
P
DISS
40 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-55 °C to +200 °C
4.0
O
C/W
θ
JC
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
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