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PT0193(06/05)
Ver: 1
5
Data Sheet
PT7C5022 Series
Crystal Oscillator Module ICs
DC Electrical Characteristics
3V operation: AxA series
V
DD
= 2.7 to 3.6V, T
A
= -20 to 80°C, unless otherwise noted.
Sym.
Parameter
Current consumption INH = open, MeaMHz cr ystal oscillator
L
= 15 pF, 30
Condition
Min
Typ
Max
Unit
I
DD
-
4
7
mA
V
IH
High level input voltage
INH pin
2.0
-
-
V
V
IL
Low level input voltage
INH pin
-
-
0.5
V
R
UP
INH pull-up resistance
Measurement cct 4
25
100
250
k
R
f
Feedback resistance
Measurement cct 5
200
600
1000
k
C
G
7.44
8
8.56
C
D
Built-in capacitance
Design value,
determined by the
internal wafer pattern
PT7C5022A1A, PT7C5022A3A,
PT7C5022A5A, PT7C5022A7A
9.3
10
10.7
pF
V
OH
High level output
voltage
Low level output
voltage
Q: Measurement cct 1, I
OH
= 4mA
2.1
2.4
-
V
V
OL
Q: Measurement cct 2, I
OL
= 4mA
-
0.3
0.4
V
V
OH
= V
DD
-
-
10
I
Z
Output leakage current Q: Measurement= LOW
DD
= 3.6V, V
INH
V
OL
= GND
-
-
10
μA
5V operation: AxA series/BxA series
V
DD
= 4.5 to 5.5 V, T
A
= -20 to 80°C, unless otherwise noted.
Sym.
Parameter
Condition
Min
Typ
Max
Unit
Load cct 1 PT7C5022AxA
-
7
12
I
DD
Current consumption
INH = open, Measurement
cct 3, C
L
= 15 pF, 30MHz
crystal
Load cct 2 PT7C5022BxA
-
7
12
mA
V
IH
High level input voltage
INH
2.0
-
-
V
V
IL
Low level input voltage
INH
-
-
0.8
V
R
UP
INH pull-up resistance
Measurement cct 4
25
100
250
k
R
f
Feedback resistance
Measurement cct 5
200
600
1000
k
C
G
7.44
8
8.56
C
D
Built-in capacitance
Design value,
determined by the
internal wafer pattern
PT7C5022A1A, PT7C5022A3A,
PT7C5022A5A, PT7C5022A7A,
PT7C5022B1A
9.3
10
10.7
pF
V
OH
High level output
voltage
Low level output
voltage
Q: Measurement cct 1, I
OH
= 8 mA
3.9
4.2
-
V
V
OL
Q: Measurement cct 1, I
OL
= 8 mA
-
0.3
0.4
V
V
OH
= V
DD
-
-
10
I
Z
Output leakage current
Q: Measurement cct 2, INH=LOW
V
OL
= GND
-
-
10
μA